SIMS and the evidence of band crossing in Pb1−xSnxTe

This study proposes and validates the use of secondary ion mass spectrometry (SIMS) to estimate band crossing positions in Pb_1−xSn_xTe. SIMS signal ratios of Sn^±/Te^± and Pb^±/Te^±  were analyzed, revealing variations in ionization probabilities dependent on electronic parameters like work function, and electron affinity. These ionization probabilities are influenced by the energy gap's position relative to the vacuum level for different x values in Pb_1−xSn_xTe.

This research not only underscores the potential of SIMS as a robust analytical technique for advanced materials but also enhances the understanding of the electronic structure of topological crystalline insulators.