Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, exhibit unique electrical properties that make them promising candidates for next-generation electronic and optoelectronic devices. In this talk, we will explore how finite element simulations can be used to provide insights into the extent which inhomogeneities affect the accuracy of standard electrical measurements of 2D materials. We will also discuss how unexpected behaviour from non-uniformity in layer number can be reproduced with these simulations, and how finite element simulations can be used to distinguish between ballistic and diffusive transport in high-quality graphene devices.